Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190, People's Republic of China.
Nanotechnology. 2011 Dec 16;22(50):505601. doi: 10.1088/0957-4484/22/50/505601. Epub 2011 Nov 23.
Vertically aligned single-crystal SnO(2) nanoshuttle arrays with uniform morphology and a relatively high aspect ratio were synthesized by a simple hot-wall chemical vapor deposition (CVD) method. It was found that regulating the growth temperature gradient could change the shape of the SnO(2) nanostructure from nanoshuttles to nanochisels and nanoneedles, and a self-catalyzing growth process was responsible for tunable morphologies of SnO(2) nanostructures. The as-synthesized SnO(2) nanoshuttles showed ultrahigh flexibility and strong toughness with a large elastic strain of ∼ 6.2, which is much higher than reported for Si and ZnO nanowire as well as most crystalline metallic materials. The field emitter fabricated using SnO(2) nanoshuttle arrays has a low turn-on electric field of around 0.6 V µm(-1), and a high field emission current density of above 10 mA cm(-2), which is comparable with the highest emission current density of carbon nanotube and nanowire field emitters.
通过简单的热壁化学气相沉积（CVD）方法合成了具有均匀形态和相对高纵横比的垂直排列的单晶 SnO(2)纳米梭阵列。研究发现，调节生长温度梯度可以改变 SnO(2)纳米结构的形状，从纳米梭到纳米凿子和纳米针，自催化生长过程负责可调谐 SnO(2)纳米结构的形态。合成的 SnO(2)纳米梭具有超高的柔韧性和强韧性，弹性应变约为 6.2，远高于报道的 Si 和 ZnO 纳米线以及大多数结晶金属材料。使用 SnO(2)纳米梭阵列制造的场发射器具有低开启电场约 0.6 V µm(-1)，以及高于 10 mA cm(-2)的高场发射电流密度，这与碳纳米管和纳米线场发射器的最高发射电流密度相当。
