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AlAs/In0.53Ga0.47As/InAs共振隧穿二极管中电学和光学性质对生长中断的依赖性。

Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.

作者信息

Zhang Yang, Guan Min, Liu Xingfang, Zeng Yiping

机构信息

Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P, O, Box 912, Beijing, 100083, People's Republic of China.

出版信息

Nanoscale Res Lett. 2011 Nov 23;6(1):603. doi: 10.1186/1556-276X-6-603.

DOI:10.1186/1556-276X-6-603
PMID:22112249
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3238496/
Abstract

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

摘要

通过电流-电压（I-V）特性、光致发光（PL）光谱和透射电子显微镜（TEM）研究了分子束外延生长的赝配AlAs/In0.53Ga0.47As/InAs共振隧穿二极管（RTD）的界面粗糙度对中断时间的依赖性。我们观察到，由于量子阱中岛的形成导致的量子阱PL分裂对AlAs/In0.53Ga0.47As界面处的生长中断很敏感。TEM图像还显示，只有通过施加最佳中断时间值才会出现具有少量岛的更平坦界面。具有PL和TEM结果的RTD的I-V特性的对称性是一致的，因为隧穿电流高度依赖于势垒厚度和界面粗糙度。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/0d0bc9831033/1556-276X-6-603-7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/1b77c43a30ac/1556-276X-6-603-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/6b8d4709f26c/1556-276X-6-603-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/c027c5757330/1556-276X-6-603-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/b2b4a582d35d/1556-276X-6-603-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/fbef4a9566aa/1556-276X-6-603-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/d6093f68794c/1556-276X-6-603-6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/0d0bc9831033/1556-276X-6-603-7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/1b77c43a30ac/1556-276X-6-603-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/6b8d4709f26c/1556-276X-6-603-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/c027c5757330/1556-276X-6-603-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/b2b4a582d35d/1556-276X-6-603-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/fbef4a9566aa/1556-276X-6-603-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/d6093f68794c/1556-276X-6-603-6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1077/3238496/0d0bc9831033/1556-276X-6-603-7.jpg

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