Ueno Shunsuke, Tomoda Yusuke, Kume Watari, Hanada Michinobu, Takiya Kazutoshi, Shirakashi Jun-ichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan.
J Nanosci Nanotechnol. 2011 Jul;11(7):6258-61. doi: 10.1166/jnn.2011.4328.
A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called "activation." By applying the activation to the nanogaps, SETs can be easily obtained. Furthermore, the charging energy of the SETs can be controlled by adjusting the magnitude of the applied current during the activation process. The integration of two SETs was achieved by passing a field emission current through two series-connected initial nanogaps. The current-voltage (I(D)-V(D)) curves of the simultaneously activated devices exhibited clear electrical-current suppression at a low-bias voltage at 16 K, which is known as the Coulomb blockade. The Coulomb blockade voltage of each device was also obviously modulated by the gate voltage. In addition, the two SETs, which were integrated by the activation procedure, exhibited similar electrical properties, and their charging energy decreased uniformly with increasing the preset current during the activation. These results indicate that the activation procedure allows the simple and easy integration of planar-type SETs.
