Akimoto Shunsuke, Ito Mitsuki, Ueno Shunsuke, Shirakashi Jun-Ichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology Koganei, Tokyo 184-8588, Japan.
J Nanosci Nanotechnol. 2013 Feb;13(2):993-6. doi: 10.1166/jnn.2013.6073.
We report a simple method for the control of electrical characteristics of planar-type metal-based single-electron transistors (SETs) using field-emission-induced electromigration. The advantages of this method are as follows: (1) the fabrication of SETs is achieved by only passing a field emission current through a nanogap and (2) the charging energy of SETs can be controlled by adjusting the magnitude of the applied current during the procedure. In order to better control the electrical properties of the SETs, we investigate the relation between control parameters of the method and electrical characteristics of the SETs. When the field-emission-induced electromigration with the preset current of 500 nA was applied to the nanogaps, current-voltage characteristics of the nanogaps displayed the suppression of electrical current at low-bias voltages known as Coulomb blockade at 16 K. In addition, Coulomb blockade voltage was clearly modulated by the gate voltage periodically at 16 K, resulting in the formation of single island in the SETs by the field-emission-induced electromigration. Furthermore, as the preset current was increased, the charging energy of the SETs was decreased with decreasing the initial gap separation of the nanogaps. These results imply that the electrical characteristics of the SETs are controllable by the preset current of the method and the initial gap separation of the nanogaps. Field-emission-induced electromigration procedure allows us to simply control electrical characteristics of planar-type metal-based SETs.
我们报告了一种利用场发射诱导电迁移来控制平面型金属基单电子晶体管（SET）电学特性的简单方法。该方法的优点如下：（1）仅通过使场发射电流通过纳米间隙即可实现SET的制造；（2）在该过程中，可通过调节施加电流的大小来控制SET的充电能量。为了更好地控制SET的电学性质，我们研究了该方法的控制参数与SET电学特性之间的关系。当对纳米间隙施加预设电流为500 nA的场发射诱导电迁移时，纳米间隙的电流-电压特性在16 K时呈现出低偏置电压下电流的抑制，即所谓的库仑阻塞。此外，在16 K时，库仑阻塞电压受到栅极电压的周期性明显调制，通过场发射诱导电迁移在SET中形成了单岛。此外，随着预设电流的增加，SET的充电能量随着纳米间隙初始间隙间距的减小而降低。这些结果表明，SET的电学特性可通过该方法的预设电流和纳米间隙的初始间隙间距来控制。场发射诱导电迁移过程使我们能够简单地控制平面型金属基SET的电学特性。
