Institute of Inorganic Chemistry and JARA-Fundamentals of Future Information Technology, RWTH Aachen University , 52074 Aachen, Germany.
Langmuir. 2012 Feb 7;28(5):2448-54. doi: 10.1021/la204393h. Epub 2012 Jan 20.
We report the formation of thiol nanopatterns on SAM covered silicon wafers by converting sulfonic acid head groups via e-beam lithography. These thiol groups act as binding sites for gold nanoparticles, which can be enhanced to form electrically conducting nanostructures. This approach serves as a proof-of-concept for the combination of top-down and bottom-up processes for the generation of electrical devices on silicon.
我们通过电子束光刻将磺酸基头基团转化，在 SAM 覆盖的硅片上形成硫醇纳米图案。这些硫醇基团可作为金纳米粒子的结合位点，这些纳米粒子可进一步增强形成导电纳米结构。这种方法为在硅片上生成电子器件的自上而下和自下而上工艺的结合提供了概念验证。
