Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
Nano Lett. 2012 Feb 8;12(2):694-8. doi: 10.1021/nl203568c. Epub 2012 Jan 11.
Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO(2) interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.
对垂直硅纳米线（NWs）的单个“端到端”金肖特基接触进行弹道电子发射显微镜测量表明，接触边缘的局部肖特基势垒高度比接触中心低 23 ± 3 meV。有限元静电模拟表明，这是由于在 Au/NW 接触附近的 Si/SiO2 界面态中存在（平衡）正电荷，导致接触边缘处的界面电场更大，这是由高功函数 Au 膜引起的局部能带弯曲引起的。
