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外延石墨烯中准粒子对相界的散射。

Quasiparticle scattering off phase boundaries in epitaxial graphene.

机构信息

Institut Néel, CNRS-UJF, Boîte Postale 166, 38042 Grenoble, France.

出版信息

Nanotechnology. 2012 Feb 10;23(5):055706. doi: 10.1088/0957-4484/23/5/055706. Epub 2012 Jan 11.

DOI:10.1088/0957-4484/23/5/055706
PMID:22236944
Abstract

We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunnelling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leading to the (√3 x √3)R30° LDOS superstructure already reported for graphite edges and more recently for SLG on SiC(0001). Using the Fourier transform of LDOS images, we demonstrate that the intrinsic doping of SLG is responsible for a LDOS pattern at the Fermi energy which is more complex than for neutral graphene or graphite, since it combines local (√3 x √3)R30° superstructure and long range beating modulation. Although these features have already been reported by Yang et al (2010 Nano Lett. 10 943-7) we propose here an alternative interpretation based on simple arguments classically used to describe standing wave patterns in standard two-dimensional systems. Finally, we discuss the absence of intervalley scattering off other typical boundaries: zig-zag edges and SLG/bilayer graphene junctions.

摘要

我们通过在超高真空下对 6H-SiC(0001) 晶体进行热分解生长的样品进行扫描隧道显微镜 (STM) 研究了单层石墨烯 (SLG) 台阶的电子结构。我们重点研究了 SLG 台阶边缘附近局部态密度 (LDOS) 的扰动。扶手椅边缘有利于谷间准粒子散射,导致已经报道的石墨边缘和最近报道的 SiC(0001) 上 SLG 的 (√3 x √3)R30°LDOS 超结构。通过 LDOS 图像的傅里叶变换,我们证明了 SLG 的本征掺杂导致费米能级处的 LDOS 图案比中性石墨烯或石墨更为复杂,因为它结合了局部 (√3 x √3)R30°超结构和长程拍频调制。尽管这些特征已经被 Yang 等人(2010 Nano Lett. 10 943-7)报道过,但我们在这里根据经典上用于描述标准二维系统中驻波图案的简单论点提出了另一种解释。最后,我们讨论了其他典型边界(锯齿边缘和 SLG/双层石墨烯结)上不存在谷间散射的情况。

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