NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa, Japan.
J Phys Condens Matter. 2012 Aug 8;24(31):314215. doi: 10.1088/0953-8984/24/31/314215. Epub 2012 Jul 20.
Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to be key for the practical use of graphene as a thermoelectric material, which could be achieved with epitaxial graphene. All of these results reveal that epitaxial graphene is physically interesting.
研究了在 SiC(0001) 上外延生长的双层石墨烯的各种物理性质。首先,研究了 SiC(0001) 上外延双层石墨烯和准自由-standing 双层石墨烯的电子输运性质。在零栅压下,电阻和 Hall 电阻的极性随顶栅压的变化表明,载流子类型分别为电子和空穴。在不同载流子密度下评估的迁移率表明,当在相同载流子密度下进行比较时,准自由-standing 双层石墨烯的迁移率高于外延双层石墨烯。迁移率的差异被认为来自于形成的石墨烯片的畴尺寸。为了阐明控制石墨烯质量的指导原则,还从理论上研究了外延石墨烯生长的机制。发现新的石墨烯片从旧石墨烯片和 SiC 衬底之间的界面生长。进一步研究表明,SiC 表面台阶的作用非常重要。第一性原理计算明确表明,C 优先从台阶边缘释放,并沿台阶边缘聚集为石墨烯核,而不是留在平台上。还表明,现有石墨烯的边缘更优先吸收孤立的 C 原子。对于某些退火条件,实验也可以在 SiC(0001) 表面上提供石墨烯岛。从理论上研究了它们的原子结构及其生长机制。所提出的嵌入式岛结构实际上在电子学上充当石墨烯岛,并且具有锯齿边缘的结构具有磁电效应。最后,从理论上研究了石墨烯的热电性质。结果表明,减少载流子散射会抑制热电动势并提高热电优值。认为精细控制费米能级位置是将石墨烯作为热电材料实际应用的关键,这可以通过外延石墨烯来实现。所有这些结果都表明外延石墨烯具有物理意义。