Hestvik Arild, Bradley Evan, Bradley Catherine
Department of Linguistics and Cognitive Science, University of Delaware, Newark, DE, USA.
J Psycholinguist Res. 2012 Dec;41(6):425-38. doi: 10.1007/s10936-011-9197-8.
The current study examined the relationship between verbal memory span and the latency with which a filler-gap dependency is constructed. A previous behavioral study found that low span listeners did not exhibit antecedent reactivation at gap sites in relative clauses, in comparison to high verbal memory span subjects (Roberts et al. in J Psycholinguist Res 36(2):175-188, 2007), which suggests that low span subjects are delayed at gap filling. This possibility was examined in the current study. Using an event-related potentials paradigm, it was found that low span subjects have an onset latency delay of about 200 ms in brain responses to violations of syntactic expectancies after the gap site, thus providing a time course measure of the delay hypothesized by previous literature.
本研究考察了言语记忆广度与构建填充语-空位依存关系的潜伏期之间的关系。先前的一项行为研究发现，与高言语记忆广度的受试者相比，低广度的听者在关系从句的空位处没有表现出先行激活（Roberts等人，《心理语言学研究杂志》，2007年，第36卷第2期，第175 - 188页），这表明低广度受试者在空位填充方面存在延迟。本研究对这一可能性进行了考察。使用事件相关电位范式发现，低广度受试者在空位处之后违反句法预期时，大脑反应的起始潜伏期延迟约200毫秒，从而提供了先前文献所假设延迟的时间进程测量。
