Yao Lei, Yung Ka Yi, Cheung Maurice C, Chodavarapu Vamsy P, Bright Frank V
Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A2A7, Canada.
Annu Int Conf IEEE Eng Med Biol Soc. 2011;2011:5-9. doi: 10.1109/IEMBS.2011.6089883.
We describe a Complementary Metal-Oxide Semiconductor (CMOS) Direct Time Interval Measurement (DTIM) Integrated Circuit (IC) to detect the decay (fall) time of the luminescence emission when analyte-sensitive luminophores are excited with an optical pulse. The CMOS DTIM IC includes 14 × 14 phototransistor array, transimpedance amplifier, regulated gain amplifier, fall time detector, and time-to-digital convertor. We examined the DTIM system to measure the emission lifetime of oxygen-sensitive luminophores tris(4,7-diphenyl-1, 10-phenanthroline) ruthenium(II) (Ru(dpp)(3)) encapsulated in sol-gel derived xerogel thin-films. The DTIM system fabricated using TSMC 0.35 μm process functions to detect lifetimes from 4 μs to 14.4 μs but can be tuned to detect longer lifetimes. The system provides 8-bit digital output proportional to lifetimes and consumes 4.5 mW of power with 3.3 V DC supply. The CMOS system provides a useful platform for the development of reliable, robust, and miniaturized optical chemical sensors.
我们描述了一种互补金属氧化物半导体（CMOS）直接时间间隔测量（DTIM）集成电路（IC），用于在对分析物敏感的发光体被光脉冲激发时检测发光发射的衰减（下降）时间。该CMOS DTIM IC包括14×14光电晶体管阵列、跨阻放大器、调节增益放大器、下降时间检测器和时间数字转换器。我们研究了DTIM系统，以测量封装在溶胶-凝胶衍生干凝胶薄膜中的对氧敏感的发光体三（4,7-二苯基-1,10-菲咯啉）钌（II）（Ru(dpp)(3)）的发射寿命。使用台积电0.35μm工艺制造的DTIM系统能够检测4μs至14.4μs的寿命，但也可以进行调整以检测更长的寿命。该系统提供与寿命成比例的8位数字输出，在3.3V直流电源下功耗为4.5mW。该CMOS系统为开发可靠、稳健且小型化的光学化学传感器提供了一个有用的平台。
