Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States.
ACS Nano. 2012 Feb 28;6(2):1284-90. doi: 10.1021/nn203998j. Epub 2012 Jan 20.
Chemical doping can decrease sheet resistance of graphene while maintaining its high transparency. We report a new method to simultaneously transfer and dope chemical vapor deposition grown graphene onto a target substrate using a fluoropolymer as both the supporting and doping layer. Solvent was used to remove a significant fraction of the supporting fluoropolymer, but residual polymer remained that doped the graphene significantly. This contrasts with a more widely used supporting layer, polymethylmethacrylate, which does not induce significant doping during transfer. The fluoropolymer doping mechanism can be explained by the rearrangement of fluorine atoms on the graphene basal plane caused by either thermal annealing or soaking in solvent, which induces ordered dipole moments near the graphene surface. This simultaneous transfer and doping of the graphene with a fluoropolymer increases the carrier density significantly, and the resulting monolayer graphene film exhibits a sheet resistance of ∼320 Ω/sq. Finally, the method presented here was used to fabricate flexible and a transparent graphene electrode on a plastic substrate.
化学掺杂可以降低石墨烯的面电阻,同时保持其高透明度。我们报告了一种新的方法,可以使用氟聚合物作为支撑层和掺杂层,同时将化学气相沉积生长的石墨烯转移并掺杂到目标衬底上。使用溶剂去除了支撑氟聚合物的很大一部分,但仍有残留的聚合物对石墨烯进行了显著掺杂。这与更广泛使用的支撑层聚甲基丙烯酸甲酯形成对比,聚甲基丙烯酸甲酯在转移过程中不会引起显著掺杂。氟聚合物掺杂机制可以通过石墨烯基面氟原子的重新排列来解释,这种重新排列是由热退火或溶剂浸泡引起的,它在石墨烯表面附近诱导有序偶极矩。这种用氟聚合物对石墨烯进行的同时转移和掺杂显著增加了载流子密度,所得的单层石墨烯薄膜的面电阻约为 320 Ω/sq。最后,本文提出的方法被用于在塑料衬底上制造柔性透明石墨烯电极。