Lee Hyeonji, Hong Seongin, Yoo Hocheon
Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Korea.
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Sunwon 16419, Korea.
Polymers (Basel). 2021 Mar 30;13(7):1087. doi: 10.3390/polym13071087.
In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe). The hole current of the Cytop-WSe field-effect transistor (FET) was boosted by the C-F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Moreover, Cytop reduces the electrical instability by preventing the adsorption of ambient molecules on the WSe surface. Annealing Cytop deposited on WSe eliminated the possible impurities associated with adsorbates (i.e., moisture and oxygen) that act as traps on the surface of WSe. After thermal annealing, the Cytop-WSe FET afforded higher p-type conductivity and reduced hysteresis. The combination of the Cytop-WSe FET with annealing provides a promising method for obtaining high-performance WSe p-type transistors.
在本研究中，我们研究了含氟聚合物Cytop对二硒化钨（WSe）的p型掺杂效应。Cytop的C-F键具有很强的偶极矩，可增强Cytop-WSe场效应晶体管（FET）的空穴电流，从而增加空穴积累。使用原子力显微镜（AFM）和拉曼光谱对观察到的p型掺杂效应进行分析，揭示了掺杂机制。此外，Cytop通过防止环境分子吸附在WSe表面来降低电不稳定性。对沉积在WSe上的Cytop进行退火，消除了与吸附物（即水分和氧气）相关的可能杂质，这些杂质在WSe表面起陷阱作用。热退火后，Cytop-WSe FET具有更高的p型导电性并减少了滞后现象。Cytop-WSe FET与退火相结合，为获得高性能WSe p型晶体管提供了一种很有前景的方法。
