Han Ting, Madden Steve, Debbarma Sukhanta, Luther-Davies Barry
The Australian National University, Canberra, ACT 2600, Australia.
Opt Express. 2011 Dec 5;19(25):25447-53. doi: 10.1364/OE.19.025447.
We demonstrate the fabrication of As2S3 rib waveguides using hot embossing. Because of the high temperature required, a thin (50nm) Ge(11.5)As(24)Se(64.5) was thermally evaporated on top of an 870nm As(2)S(3) layer to protect against surface degradation during embossing. The waveguides propagation loss was 0.52dB/cm for the TE and 0.41dB/cm for the TM polarizations at 1550nm for a waveguide cross-section dimension of 3.8 × 1μm. The nonlinearity of a 2.2μm wide waveguide was shown to be 13500W(-1)km(-1) using four-wave mixing demonstrating that these embossed waveguides were capable of being used for all-optical processing.
我们展示了使用热压印工艺制造硫化砷（As2S3）肋形波导。由于所需温度较高，在870nm厚的硫化砷（As2S3）层顶部热蒸发了一层薄（50nm）的锗（11.5）砷（24）硒（64.5），以防止压印过程中表面退化。对于横截面尺寸为3.8×1μm的波导，在1550nm处，TE偏振的波导传播损耗为0.52dB/cm，TM偏振的为0.41dB/cm。使用四波混频表明，2.2μm宽的波导的非线性为13500W-1km-1，这表明这些压印波导能够用于全光处理。
