Li Zhi, Fu Yang, Piels Molly, Pan Huapu, Beling Andreas, Bowers John E, Campbell Joe C
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA.
Opt Express. 2011 Dec 12;19(26):B385-90. doi: 10.1364/OE.19.00B385.
We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.
我们展示了一种倒装芯片键合的改进型单载流子传输（MUTC）光电二极管，在15 GHz时射频输出功率为0.75 W（28.8 dBm），三阶交调点（OIP3）高达59 dBm。该光电二极管的响应度为0.7 A/W，3 dB带宽大于15 GHz，在11 V反向偏置下饱和光电流大于180 mA。
