Heo Junseok, Jiang Zhenyu, Xu Jian, Bhattacharya Pallab
Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
Opt Express. 2011 Dec 19;19(27):26394-8. doi: 10.1364/OE.19.026394.
Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ~3.1 nm corresponding to a cavity quality factor of ~500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.
展示了一种基于硅的PbSe胶体量子点电致发光器件在1.55μm处的相干且定向发射。量子点夹在金属镜和分布式布拉格反射器之间，并经过化学处理以增强电子耦合。电子和空穴分别通过ZnO纳米晶体和氧化铟锡注入。在3 A/cm²的低注入电流密度下，测得的电致发光最小线宽约为3.1 nm，对应腔品质因数约为500，并且具有高度定向的发射特性。
