Korn Dietmar, Lauermann Matthias, Koeber Sebastian, Appel Patrick, Alloatti Luca, Palmer Robert, Dumon Pieter, Freude Wolfgang, Leuthold Juerg, Koos Christian
Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany.
Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany.
Nat Commun. 2016 Mar 7;7:10864. doi: 10.1038/ncomms10864.
Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.
硅光子学通过利用微电子行业高度发达的制造工艺,实现了大规模的光子 - 电子集成。然而,尽管在硅平台上已经展示了丰富多样的器件组合,但片上光源仍然是一个关键挑战,因为该材料的间接带隙抑制了高效的光子发射,从而阻碍了激光发射。在此,我们展示了一类可在绝缘体上硅(SOI)集成平台上制造的红外激光器。这些激光器基于硅 - 有机混合(SOH)集成概念,将纳米光子SOI波导与提供光增益的染料掺杂有机包层材料相结合。我们展示了在1310纳米波长下,片上峰值输出功率高达1.1瓦的脉冲室温激光发射。SOH方法能够高效大规模生产近红外发射的硅光子光源,并通过适当选择染料材料和谐振器几何结构,提供在宽范围内调谐发射波长的可能性。