双 n 型掺杂还原氧化石墨烯场效应晶体管由半导体纳米晶体控制。
Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.
机构信息
National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
出版信息
Chem Commun (Camb). 2012 Apr 28;48(34):4052-4. doi: 10.1039/c2cc17543f. Epub 2012 Jan 25.
PMID:22278380
Abstract
Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
摘要
在这里，我们展示了一种快速而简单的方法，即用纳米晶体掺杂还原氧化石墨烯 (rGO) 场效应晶体管 (FET)，以产生光和偏置电压的双 n 型行为。这种方便的方法有望实现石墨烯晶体管的工业化掺杂。
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