Jun So-Yeon, Park SeungHun, Baek Nam Wuk, Lee Tae-Young, Yoo Sehoon, Jung Donggeun, Kim Jin-Young
Advanced Joining & Additive Manufacturing R&D Department, Korea Institute of Industrial Technology Incheon 21999 Republic of Korea
Department of Physics, Sungkyunkwan University Suwon 16419 Republic of Korea.
RSC Adv. 2022 Jun 1;12(26):16412-16418. doi: 10.1039/d2ra01266a.
Ferroelectric barium titanate (BTO) powder particles were encapsulated by three different sizes of reduced graphene oxide (rGO) platelets. The size of the graphene oxide (GO) platelets is controlled by varying the horn type ultrasonic times, 0, 30, and 60 min, respectively, and they are reduced with hydrazine to obtain rGO-encapsulated BTO (rGO@BTO) film. The rGO@BTO film exhibits an increase in the dielectric characteristics due to the interfacial polarization. These improved characteristics include a dielectric constant of 194 (a large increment of 111%), along with the dielectric loss of 0.053 (a slight increment of 13%) at 1 kHz, compared to the pure BTO dielectric film. The improvement in the dielectric constant of the rGO@BTO is attributed to the encapsulation degree between the rGO platelets and BTO powder particles, which results in the interfacial polarization and micro-capacitor effect in a dielectric film, and also contributes to a low dielectric loss. Therefore, a suitable size of rGO platelets for encapsulation is essential for high-dielectric performance.
铁电钛酸钡（BTO）粉末颗粒被三种不同尺寸的还原氧化石墨烯（rGO）片层包裹。氧化石墨烯（GO）片层的尺寸通过分别改变变幅杆型超声时间（0、30和60分钟）来控制，然后用肼将它们还原以获得rGO包裹的BTO（rGO@BTO）薄膜。由于界面极化，rGO@BTO薄膜的介电特性有所增加。与纯BTO介电薄膜相比，这些改善的特性包括在1 kHz时介电常数为194（大幅增加111%），以及介电损耗为0.053（轻微增加13%）。rGO@BTO介电常数的提高归因于rGO片层与BTO粉末颗粒之间的包裹程度，这导致了介电薄膜中的界面极化和微电容效应，并且也有助于降低介电损耗。因此，合适尺寸的用于包裹的rGO片层对于高介电性能至关重要。
