Joung Somyoung, Yoon Sungwoo, Han Chang-Soo, Kim Youngjo, Jeong Sohee
Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343, Republic of Korea.
Nanoscale Res Lett. 2012 Jan 30;7(1):93. doi: 10.1186/1556-276X-7-93.
Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.
胶体III-V族半导体纳米晶体量子点（NQDs）因其与II-VI族化合物相比毒性降低而备受关注。然而，III-V族半导体纳米晶体的研究和应用受到其合成困难的限制。特别是，由于III-V族半导体中的分子键具有高度共价性，因此难以控制成核过程。本文提出了一种InP NQDs的合成方法，使用新合成的具有不同功能基团的有机金属磷（P）前驱体，同时保留P-Si键。在我们的研究中引入庞大的侧链提高了稳定性，同时促进了InP在易于实现的低温范围（210°C至300°C）下以强限制的方式形成。进一步用ZnS进行壳层包覆得到了高发光的核壳材料。首次开展了用于高质量InP NQDs的P前驱体的设计与合成，并且我们能够通过改变P前驱体的反应性来控制成核，从而获得尺寸均匀的大尺寸InP NQDs。这为大规模生产高质量无镉纳米晶体量子点开辟了道路。
