用于 III-V 量子点合成的改进前驱体化学。
Improved precursor chemistry for the synthesis of III-V quantum dots.
机构信息
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
出版信息
J Am Chem Soc. 2012 Dec 19;134(50):20211-3. doi: 10.1021/ja309863n. Epub 2012 Dec 10.
Abstract
The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide quantum dots indeed improves with decreased precursor reactivity.
摘要
III-V 量子点的合成一直以来都比其他类型的无机量子点更具挑战性。这归因于高度反应性的 V 族前体。我们合成了适合用作 V 族前体的分子，并使用多种互补技术对其反应性进行了表征。我们表明，随着前体反应性的降低，砷化铟量子点的粒径分布确实得到了改善。
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