Department of Physics and Astronomy, Seoul National University, Seoul, Korea.
Nanotechnology. 2012 Mar 2;23(8):085204. doi: 10.1088/0957-4484/23/8/085204. Epub 2012 Feb 1.
We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source-drain voltage operation. At a high source-drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on-off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on-off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays.
我们报告了基于浮动电极的薄膜晶体管（F-TFT），该晶体管基于纯化的半导体单壁碳纳米管（swCNT）网络，用于高源漏电压操作。在高源漏电压下，传统的 swCNT-TFT 表现出较差的晶体管性能，开关比小，这归因于大偏压下肖特基势垒调制的减小。在 F-TFT 器件中，swCNT 网络通道被分成多个由浮动电极连接的通道。与具有单个通道的传统 swCNT-TFT 相比，F-TFT 表现出更高的开关比。这项工作应该为设计用于高压应用（如显示器）的 swCNT-TFT 提供重要的指导。
