硼 δ 掺杂（111）金刚石溶液栅场效应晶体管。
Boron δ-doped (111) diamond solution gate field effect transistors.
机构信息
London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH, UK.
出版信息
Biosens Bioelectron. 2012 Mar 15;33(1):152-7. doi: 10.1016/j.bios.2011.12.044. Epub 2012 Jan 8.
A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.
首次提出了一种在（111）金刚石上采用氧化硼 δ 掺杂沟道的解栅场效应晶体管（SGFET）。采用优化的等离子体化学气相沉积（PECVD）工艺沉积 δ 层，与之前在（100）和多晶金刚石上制造的类似器件相比，SGFET 的电流-电压（I-V）特性得到了改善，其中器件被证明在金刚石的电化学窗口内工作在增强模式下，实现了沟道夹断和漏源电流饱和。提取出最大增益和跨导分别为 3 和 200μS/mm，表现出与基于氢的 SGFET 相当的品质因数。氧化器件表现出 36 mV/pH 的位绑定模型 pH 灵敏度，显示出快速的时间响应。考虑到金刚石对细胞的生物相容性，该器件具有高度可变形的晶体管特性、pH 灵敏度以及对氢终止金刚石 SGFET 常见的阳极氧化的稳定性，氧化硼 δ 掺杂金刚石 SGFET 有望用于记录电活性细胞的动作电位。
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