一种采用氟封端多晶掺硼金刚石作为pH不敏感溶液栅场效应晶体管的全固态pH传感器。
An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.
作者信息
Shintani Yukihiro, Kobayashi Mikinori, Kawarada Hiroshi
机构信息
Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan.
R&D Departent, Innovation Center, MK-Hdqrs, Yokogawa Electric Corporation, Japan, 2-9-32 Nakacho, Musashino, Tokyo 180-8750, Japan.
出版信息
Sensors (Basel). 2017 May 5;17(5):1040. doi: 10.3390/s17051040.
A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.
氟封端的多晶掺硼金刚石表面成功用作全固态pH传感器的pH不敏感溶液栅场效应晶体管（SGFET）。与pH敏感的含氧通道相比，氟化多晶掺硼金刚石（BDD）通道的pH不敏感性小于3mV/pH。通过差分场效应晶体管（FET）传感，在2-10的pH范围内获得了27 mV/pH的灵敏度；因此，它分别展示了具有pH敏感氧封端的多晶BDD SGFET和铂准参比电极的全固态pH传感器的优异性能。
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