Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Nanoscale. 2012 Mar 7;4(5):1455-62. doi: 10.1039/c2nr11706a. Epub 2012 Feb 8.
Semiconductor nanostructures exhibit unique properties distinct from their bulk counterparts by virtue of nanoscale dimensions; in particular, exceptionally large surface area-to-volume ratios relative to that of the bulk produce variations in surface state populations that have numerous consequences on materials properties. Of the low-dimensional semiconductor nanostructures, nanowires offer a unique prospect in nanoscale optoelectronics due to their one-dimensional architecture. Already, many devices based upon individual nanowires have been demonstrated, but questions about how nano-size and structural variations affect the underlying materials properties still remain unanswered. Here, we focus on understanding the growth mechanism and kinetics of ZnO nanowires and related nanowalls, and their effects on nanoscale structural and optical properties.
半导体纳米结构具有独特的性质，与体材料相比，其纳米尺寸使其具有独特的性质；特别是，相对于体材料的表面状态，纳米级尺寸具有非常大的表面积与体积比，这导致了表面状态群体的变化，对材料性能有许多影响。在低维半导体纳米结构中，纳米线由于其一维结构，在纳米尺度光电学中具有独特的前景。已经有许多基于单个纳米线的器件得到了证明，但是关于纳米尺寸和结构变化如何影响基础材料性能的问题仍然没有得到解答。在这里，我们专注于理解 ZnO 纳米线和相关纳米墙的生长机制和动力学，以及它们对纳米尺度结构和光学性质的影响。
