Kavli Nanoscience Institute and Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, Pasadena, California 91125, USA.
Nano Lett. 2012 Mar 14;12(3):1459-63. doi: 10.1021/nl2041673. Epub 2012 Feb 15.
The local charge carrier density of graphene can exhibit significant and highly localized variations that arise from the interaction between graphene and the local environment, such as adsorbed water, or a supporting substrate. However, it has been difficult to correlate such spatial variations with individual impurity sites. By trapping (under graphene) nanometer-sized water clusters on the atomically well-defined Au(111) substrate, we utilize scanning tunneling microscopy and spectroscopy to characterize the local doping influence of individual water clusters on graphene. We find that water clusters, predominantly nucleated at the atomic steps of Au(111), induce strong and highly localized electron doping in graphene. A positive correlation is observed between the water cluster size and the local doping level, in support of the recently proposed electrostatic-field-mediated doping mechanism. Our findings quantitatively demonstrate the importance of substrate-adsorbed water on the electronic properties of graphene.
石墨烯的局域载流子密度会表现出显著且高度局域的变化,这些变化源自石墨烯与局部环境(如吸附水或支撑衬底)之间的相互作用。然而,很难将这种空间变化与单个杂质位置相关联。通过在原子级定义明确的 Au(111) 衬底上捕获(在石墨烯下)纳米级大小的水分子团簇,我们利用扫描隧道显微镜和光谱学来表征单个水分子团簇对石墨烯的局部掺杂影响。我们发现,水分子团簇主要在 Au(111) 的原子台阶上成核,会在石墨烯中引起强烈且高度局域的电子掺杂。在支持最近提出的静电场介导掺杂机制的情况下,观察到水团簇尺寸与局域掺杂水平之间存在正相关关系。我们的发现定量证明了吸附在衬底上的水对石墨烯电子性质的重要性。