Huang Jun, Xu Ke, Fan Ying Min, Niu Mu Tong, Zeng Xiong Hui, Wang Jian Feng, Yang Hui
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, People's Republic of China.
Nanoscale Res Lett. 2012 Feb 22;7(1):150. doi: 10.1186/1556-276X-7-150.
Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.PACS: 62.20.fq; 81.05.Ea; 61.72.Lk.
利用纳米压痕、阴极发光和透射电子显微镜研究了c面（0001）和非极性GaN单晶的弹塑性力学变形行为。纳米压痕测试表明，c面GaN比非极性GaN更不易发生塑性变形，且具有更高的硬度和杨氏模量。对压痕诱导塑性变形的阴极发光和透射电子显微镜表征表明，c面GaN有两个主要滑移系，而非平面GaN只有一个最有利的滑移系。我们认为，GaN的各向异性弹塑性力学性能与其各向异性塑性变形行为有关。物理化学和晶体学分类号：62.20.fq；81.05.Ea；61.72.Lk。
