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基于氮化镓的激光二极管中位错演化的纳米压痕研究。

Nano-indentation study of dislocation evolution in GaN-based laser diodes.

作者信息

Chen Jingjing, Su Xujun, Wang Guobing, Niu Mutong, Li Xinran, Xu Ke

机构信息

Suzhou Institute of Nano-tech and Nano-bionics, CAS, Ruoshui Road 398, Suzhou Industrial Park, Suzhou, 215123, China.

Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou, 215123, China.

出版信息

Discov Nano. 2024 Mar 7;19(1):40. doi: 10.1186/s11671-024-03983-0.

DOI:10.1186/s11671-024-03983-0
PMID:38453741
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10920521/
Abstract

The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 3> were introduced on either {11 2} <11 3>, or {1 01} <11 3> pyramidal slip systems in the upper p-GaN layer. Besides, {0001} <11 0> basal slip system was also activated. The AlGaN/InGaN multi-layers in device can provide mismatch stresses to prevent dislocations from slipping through. It was observed that the density of dislocations induced by the indenter significantly decreased from the upper to the lower regions of the multi-layers. The a + c dislocations on pyramidal slip planes were mostly blocked by the strained layers.

摘要

研究了基于GaN的发光二极管中通过纳米压痕技术诱导的位错滑移系统和运动行为。在顶部p-GaN层的{11 2}<11 3>或{1 01}<11 3>金字塔形滑移系统上引入了柏氏矢量b = 1/3<11 3>的位错。此外，{0001}<11 0>基面滑移系统也被激活。器件中的AlGaN/InGaN多层结构可以提供失配应力，以防止位错滑移通过。观察到由压头诱导的位错密度从多层结构的上部到下部区域显著降低。金字塔形滑移面上的a + c位错大多被应变层阻挡。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/cabcd9132c3f/11671_2024_3983_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/06bd09b4e761/11671_2024_3983_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/16418d67765f/11671_2024_3983_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/61d4e15a47aa/11671_2024_3983_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/cabcd9132c3f/11671_2024_3983_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/06bd09b4e761/11671_2024_3983_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/16418d67765f/11671_2024_3983_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/61d4e15a47aa/11671_2024_3983_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5821/10920521/cabcd9132c3f/11671_2024_3983_Fig4_HTML.jpg

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本文引用的文献

1
Dislocation luminescence in GaN single crystals under nanoindentation.GaN 单晶体在纳米压痕下的位错发光。
Nanoscale Res Lett. 2014 Dec 1;9(1):649. doi: 10.1186/1556-276X-9-649. eCollection 2014.
2
Nanoscale anisotropic plastic deformation in single crystal GaN.单晶氮化镓中的纳米级各向异性塑性变形
Nanoscale Res Lett. 2012 Feb 22;7(1):150. doi: 10.1186/1556-276X-7-150.