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通过汽-液-固斜角沉积控制氧化铟锡纳米晶须形态。

Indium tin oxide nanowhisker morphology control by vapour-liquid-solid glancing angle deposition.

机构信息

Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada.

出版信息

Nanotechnology. 2012 Mar 16;23(10):105608. doi: 10.1088/0957-4484/23/10/105608. Epub 2012 Feb 24.

Abstract

A new growth technique for indium tin oxide nanowhiskers with increased control over feature size and spacing is reported. The technique is based on a unique combination of self-catalysed vapour-liquid-solid (VLS) growth and glancing angle deposition (GLAD). This VLS-GLAD technique provides enhanced control over nanowhisker morphology as the effect of typical VLS growth parameters (e.g. flux rate, temperature) is amplified at large deposition angles characteristic of GLAD. Spatial modulation of the collimated growth flux controls trunk width, number and orientation of branches, and overall nanowhisker density. Here we report the influence of growth conditions (including deposition angle, flux rate, nominal pitch and substrate temperature) on nanowhisker morphology, with specific focus on the effect of large deposition angles. Sheet resistance and transmission of the films were measured to characterize their performance as transparent conductive oxides. Hybrid nanostructured films grown in this study include high surface area nanowhiskers protruding from a conductive film, ideal for transparent conductive electrode applications.

摘要

一种新的氧化铟锡纳米线的生长技术,可实现对特征尺寸和间距的更好控制,该技术基于自催化气相-液相-固相(VLS)生长和掠角沉积(GLAD)的独特结合。这种 VLS-GLAD 技术提供了对纳米线形态的增强控制,因为 GLAD 特征的大沉积角放大了典型 VLS 生长参数(例如,流速、温度)的影响。准直生长通量的空间调制控制着主干的宽度、分支的数量和方向以及整体纳米线密度。在这里,我们报告了生长条件(包括沉积角、流速、名义间距和衬底温度)对纳米线形态的影响,特别关注大沉积角的影响。通过测量薄膜的方阻和透过率来表征其作为透明导电氧化物的性能。本研究中生长的混合纳米结构薄膜包括从导电薄膜突出的高表面积纳米线,非常适合透明导电电极应用。

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