School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
Nanotechnology. 2012 Mar 16;23(10):105202. doi: 10.1088/0957-4484/23/10/105202. Epub 2012 Feb 24.
We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.
我们制备了一种具有多层石墨烯（MLG）膜嵌入聚酰亚胺（PI）层的阵列型有机非易失性存储器件。该存储器件具有高的 ON/OFF 比（超过 10^6）和长的保持时间（超过 10^4 s）。Al/PI/MLG/PI/Al 存储器件的开关是由于插入到 PI 层中的 MLG 膜的存在。双对数电流-电压特性可以根据基于电荷陷阱模型的空间电荷限制电流传导来解释。导电原子力显微镜发现，在低电阻导通状态下的传导路径分布在一个高度局域化的区域，这与富含碳的丝状开关机制有关。
