Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng-Kung University , Tainan 701, Taiwan.
ACS Appl Mater Interfaces. 2014 Apr 23;6(8):5413-21. doi: 10.1021/am500815n. Epub 2014 Apr 14.
This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 10(6) and a long retention time of over 10(5) seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.
本文介绍了明胶的特性，它可以在铝（Al）/明胶（35nm）/ITO 器件中引起可重复的阻变和双极性阻变。该存储器件表现出超过 10^6 的高 ON/OFF 比和超过 10^5 秒的长保持时间。通过高角度暗场透射电子显微镜对原始高阻态（HRS）和复位过程后回到 HRS 的 Al/明胶/ITO 器件的图像进行研究，探讨了阻变机制。能谱分析揭示了在丝的断裂处，N 和 Al 元素的聚集以及碳和氧元素的同时存在。此外，通过电流感应原子力显微镜，我们发现导通路径在 ON 状态下分布在高度局部化的区域，这与富含碳的细丝开关机制有关。这些结果表明，N 与 Al 离子的螯合作用提高了低阻态的导电性，但不会产生金属丝。
