Lee Ke-Jing, Chang Yu-Chi, Lee Cheng-Jung, Wang Li-Wen, Wang Yeong-Her
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
Materials (Basel). 2017 Dec 9;10(12):1408. doi: 10.3390/ma10121408.
A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm²/Vs, low threshold voltage of -1.1 V, and low leakage current of 10 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO₂-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.
一种将电阻式随机存取存储器（RRAM）单元连接到有机薄膜晶体管（OTFT）器件的单晶体管单电阻（1T1R）架构被成功证明可避免单个RRAM单元的串扰问题。该OTFT器件以锆酸钡镍（BZN）作为介电层，在1T1R操作方案中作为驱动器时，展现出良好的电学性能，如5 cm²/Vs的高场效应迁移率、-1.1 V的低阈值电压和10 A的低漏电流。具有与BZN OTFT器件相连的基于TiO₂的RRAM单元的1T1R架构显示出低工作电流（10 μA）和可靠的数据保持能力（超过十年）。1T1R器件的这种良好性能可归因于使用乙酰丙酮镍（II）替代乙酰丙酮引入的额外势垒高度，以及BZN介电层相对较低的漏电流。所提出的具有低漏电流OTFT和RRAM优异均匀电阻分布的1T1R器件在实际低功耗电子应用中具有良好的应用潜力。
