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单壁硅纳米管的结构依赖性光学性质。

Structure-dependent optical properties of single-walled silicon nanotubes.

机构信息

Institute of Functional Material Chemistry, Department of Chemistry, Northeast Normal University, Changchun 130024, P.R. China.

出版信息

Phys Chem Chem Phys. 2012 Apr 14;14(14):4695-702. doi: 10.1039/c2cp23164f. Epub 2012 Feb 28.

Abstract

The electron excitations of Single-Walled Silicon Nanotubes (SWSiNTs), with sp(2) and sp(3) hybridization, were studied using the localized-density-matrix (LDM) method with INDO/S parameters. Strong anisotropic characteristics of the dynamic polarizabilities were found for all the nanotubes. The transitional intensity along the tubular axis is much larger than that perpendicular to the axis for all the nanotubes. The optical gaps of sp(3)-hybridized infinitely-long pentagonal SWSiNTs are near 3.0 eV and 4.7 eV owing to σ-σ* transitions along the direction of the tubular axis. The optical gaps of sp(2)-hybridized infinitely-long armchair SWSiNTs along the tube axis direction are about 0.7 eV and 2.4 eV for Si(3,3) SWSiNTs and 0.7 eV and 2.7 eV for Si(4,4) SWSiNTs. The former peak at 0.7 eV originated from π-π* electron transitions and the latter peak at 2.4 eV or 2.7 eV originated from σ-σ* electron transitions. Meanwhile, the intensities of π-π* electron transitions are stronger than those of σ-σ* electron transitions in SWSiNTs. The low sp(2) transition energy derived from the weak overlap of unpaired p(z) orbitals of silicon atoms. Moreover, the electronic excitations of zigzag SWSiNTs are similar to those of armchair structures. This indicates that sp(2)-hybridized silicon nanotubes possess much greater potential for application in optical fields.

摘要

采用局域密度矩阵(LDM)方法和 INDO/S 参数,研究了 sp(2)和 sp(3)杂化的单壁硅纳米管(SWSiNTs)的电子激发态。所有纳米管都表现出强烈的各向异性动态极化率特征。沿管状轴的跃迁强度远大于垂直于轴的跃迁强度。由于 σ-σ跃迁沿管状轴方向,所有 sp(3)杂化的无限长五边形 SWSiNTs 的光学带隙约为 3.0 eV 和 4.7 eV。沿管轴方向 sp(2)杂化的无限长扶手椅 SWSiNTs 的光学带隙对于 Si(3,3)SWSiNTs 约为 0.7 eV 和 2.4 eV,对于 Si(4,4)SWSiNTs 约为 0.7 eV 和 2.7 eV。前者的 0.7 eV 峰源于 π-π电子跃迁,后者的 2.4 eV 或 2.7 eV 峰源于 σ-σ电子跃迁。同时,SWSiNTs 中 π-π电子跃迁的强度强于 σ-σ*电子跃迁。低的 sp(2)跃迁能量源于硅原子未配对的 p(z)轨道重叠较弱。此外,锯齿形 SWSiNTs 的电子激发态类似于扶手椅结构。这表明 sp(2)杂化硅纳米管在光学领域具有更大的应用潜力。

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