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高能金属离子注入用于降低氧化铝陶瓷的表面电阻率

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic.

作者信息

Gushenets V I, Nikolaev A G, Oks E M, Savkin K P, Yushkov G Yu, Brown I G

机构信息

Institute of High Current Electronics SB RAS, Tomsk, Russia.

出版信息

Rev Sci Instrum. 2012 Feb;83(2):02B908. doi: 10.1063/1.3670599.

DOI:10.1063/1.3670599
PMID:22380340
Abstract

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

摘要

在这项工作中,展示了通过用MevvaV.Ru真空电弧源产生的加速金属离子束处理陶瓷绝缘体来提高其表面电导率的可能性。表面电导率的增加是由于实验条件,在该条件下,绝缘收集器被束离子充电至比加速电压低许多倍的电位,因此比束离子的平均能量低许多倍。观察到的加速离子束电荷中和效应大概与被加速离子从源加速系统的电极和真空室壁上打出的电子有关。

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