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用于神经接口的电压偏置、循环伏安法和电阻抗谱

Voltage biasing, cyclic voltammetry, & electrical impedance spectroscopy for neural interfaces.

作者信息

Wilks Seth J, Richner Tom J, Brodnick Sarah K, Kipke Daryl R, Williams Justin C, Otto Kevin J

机构信息

Weldon School of Biomedical Engineering, Purdue University, USA.

出版信息

J Vis Exp. 2012 Feb 24(60):3566. doi: 10.3791/3566.

Abstract

Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays.

摘要

电阻抗谱(EIS)和循环伏安法(CV)无需额外的侵入性操作即可测量电极与组织界面的特性,并且可用于长期监测电极性能。EIS在多个频率下测量电阻抗,阻抗增加表明装置周围神经胶质瘢痕形成增加,而循环伏安法测量电极的电荷承载能力,并表明电荷在不同电压水平下如何转移。随着植入电极的老化,EIS和CV数据会发生变化,并且先前记录到尖峰神经元的电极位点在神经记录方面的功效通常会显著降低。向植入的电极阵列施加短暂的电压脉冲(称为恢复活力),可以在一段时间内使原本沉默的电极位点恢复尖峰活动。恢复活力会改变EIS和CV,并且可以通过这些互补方法进行监测。通常,每天测量EIS以指示电极位点处的组织反应。如果先前有尖峰的通道中没有尖峰,则使用CV来确定电极位点的电荷承载能力,并可以应用恢复活力来提高界面功效。然后重复进行CV和EIS以检查电极与组织界面的变化,并收集神经记录。恢复活力的总体目标是延长植入阵列的功能寿命。

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