基于旋涂辅助交替浸镀法在垂直 ZnO 纳米线阵列上制备 CdS/CdSe 量子点壳层用于光电化学电池和量子点敏化太阳能电池。
CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.
机构信息
MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, P R China.
出版信息
Chemphyschem. 2012 Apr 23;13(6):1435-9. doi: 10.1002/cphc.201101028. Epub 2012 Mar 19.
A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells.
采用简单的旋涂法，通过依次离子层吸附和反应，在 ZnO 纳米线阵列表面组装了 CdS/CdSe 复合壳。所制备的光电化学电池中的光电极表现出高光电流密度，在量子点敏化太阳能电池中也产生了良好的功率转换效率。
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