基于超长单晶V₂O₅纳米带的快速可见光光电开关。

Fast visible light photoelectric switch based on ultralong single crystalline V₂O₅ nanobelt.

作者信息

Lu Jianing, Hu Ming, Tian Ye, Guo Chuanfei, Wang Chuang, Guo Shengming, Liu Qian

机构信息

School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China.

出版信息

Opt Express. 2012 Mar 26;20(7):6974-9. doi: 10.1364/OE.20.006974.

DOI:10.1364/OE.20.006974

PMID:22453376

Abstract

A photoelectric switch with fast response to visible light (<200 μs), suitable photosensitivity and excellent repeatability is proposed based on the ultralong single crystalline V₂O₅ nanobelt, which are synthesized by chemical vapor deposition and its photoconductive mechanism can well be explained by small polaron hopping theory. Our results reveal that the switch has a great potential in next generation photodetectors and light-wave communications.

摘要

基于化学气相沉积法合成的超长单晶五氧化二钒纳米带，提出了一种对可见光响应快速（<200 μs）、具有合适的光敏性和优异重复性的光电开关，其光电导机制可以用小极化子跳跃理论很好地解释。我们的结果表明，该开关在下一代光电探测器和光波通信中具有巨大潜力。