射频溅射沉积法制备少层石墨烯及其在场发射中的应用

Vapor-solid growth of few-layer graphene using radio frequency sputtering deposition and its application on field emission.

机构信息

Key Laboratory of Beam Technology and Material Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China.

出版信息

ACS Nano. 2012 May 22;6(5):3727-33. doi: 10.1021/nn300900v. Epub 2012 Apr 12.

DOI:10.1021/nn300900v

PMID:22482928

Abstract

The carbon nanotube (CNT) and graphene hybrid is an attractive candidate for field emission (FE) because of its unique properties, such as high conductivity, large aspect ratio of CNT, and numerous sharp edges of graphene. We report here a vapor-solid growth of few-layer graphene (FLG, less than 10 layers) on CNTs (FLG/CNT) and Si wafers using a radio frequency sputtering deposition system. Based on SEM, TEM, and Raman spectrum analyses, a defect nucleation mechanism of the FLG growth was proposed. The FE measurements indicate that the FLG/CNT hybrids have low turn-on (0.956 V/μm) and threshold fields (1.497 V/μm), large field enhancement factor (∼4398), and good stability. Excellent FE properties of the FLG/CNT hybrids make them attractive candidates as high-performance field emitters.

摘要

碳纳米管（CNT）和石墨烯的混合物由于其独特的性质，如高导电性、CNT 的大纵横比和石墨烯的众多尖锐边缘，是场发射（FE）的有吸引力的候选材料。我们在这里报告了使用射频溅射沉积系统在 CNT（FLG/CNT）和 Si 晶片上气相生长少层石墨烯（FLG，少于 10 层）。基于 SEM、TEM 和拉曼光谱分析，提出了 FLG 生长的缺陷成核机制。FE 测量表明，FLG/CNT 混合物具有低开启（0.956 V/μm）和阈值场（1.497 V/μm）、大的场增强因子（约 4398）和良好的稳定性。FLG/CNT 混合物优异的 FE 性能使其成为高性能场发射器的有吸引力的候选材料。