通过等离子体增强化学气相沉积中的氩等离子体工艺在SiO/Si上垂直生长石墨烯。

Growth promotion of vertical graphene on SiO/Si by Ar plasma process in plasma-enhanced chemical vapor deposition.

作者信息

Sui Yanping, Chen Zhiying, Zhang Yanhui, Hu Shike, Liang Yijian, Ge Xiaoming, Li Jing, Yu Guanghui, Peng Songang, Jin Zhi, Liu Xinyu

机构信息

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technoloy (SIMIT), Chinese Academy of Sciences 865 Changning Road Shanghai 200050 China

CAS Center for Excellence in Superconducting Electronics 865 Changning Road Shanghai 200050 China.

出版信息

RSC Adv. 2018 May 22;8(34):18757-18761. doi: 10.1039/c8ra00869h.

DOI:10.1039/c8ra00869h

PMID:35539632

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9080714/

Abstract

This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment. Combined with various substrate treatments, including hydrofluoric acid etching and oxidation after Ar plasma treatment, Ar plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planar films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar plasma pretreatment is proposed.

摘要

本研究通过氩等离子体处理，研究了等离子体增强化学气相沉积中垂直取向石墨烯的生长促进作用。结合各种衬底处理，包括氩等离子体处理后的氢氟酸蚀刻和氧化，氩等离子体预处理通过粗糙衬底表面上的微腔和活性生长位点促进垂直生长。微腔影响沉积的平面薄膜的应变分布和缺陷，这有利于二维沉积向三维垂直生长的转变。提出了氩等离子体预处理效果的生长模型。