Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, E-08193 Bellaterra, CAT, Spain.
Nano Lett. 2012 May 9;12(5):2579-86. doi: 10.1021/nl300840q. Epub 2012 Apr 17.
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.
采用具有高角度环形暗场 (HAADF) 成像的像差校正扫描透射电子显微镜 (STEM) 和新开发的环形明场 (ABF) 成像，为从二元化合物中确定半导体纳米线 (NWs) 的极性提供了新的指导方针在两种极端情况下：(i) 当哑铃由相似质量的原子形成时（GaAs），以及 (ii) 其中一个原子极轻时（N 或 O：ZnO 和 GaN/AlN）。这些程序的理论基础使我们能够克服识别哑铃极性的主要挑战。它存在于哑铃中组成原子的分离和识别中。所提出的实验途径为纳米结构的精细表征开辟了新途径，例如在电子和光电领域，其中极性对于理解其物理性质（光学和电子）以及它们的生长机制至关重要。
