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在铜衬底上化学气相沉积石墨烯中存在大的物理吸附应变。

Large physisorption strain in chemical vapor deposition of graphene on copper substrates.

机构信息

Physics Department, University of Northern Iowa, Cedar Falls, Iowa 50614, USA.

出版信息

Nano Lett. 2012 May 9;12(5):2408-13. doi: 10.1021/nl300397v. Epub 2012 Apr 13.

DOI:10.1021/nl300397v
PMID:22494089
Abstract

Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains.

摘要

在单晶 Cu 衬底上通过化学气相沉积生长的石墨烯单层受到不均匀的物理吸附应变的影响,这种应变取决于 Cu 表面的取向。应变在拉曼光谱中被揭示出来,并通过分子动力学(MD)模拟进行定量解释。在 Cu(111)上的石墨烯中,确定了约 0.5%的平均压缩应变。在 Cu(100)上的石墨烯中,MD 模拟解释了观察到的高度不均匀的应变。

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