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通过 MoS 结的能带工程实现环境不敏感和栅极可控的光电流。

Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS junctions.

机构信息

Department of Physics, National Taiwan University, Taipei 106, Taiwan.

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan.

出版信息

Sci Rep. 2017 Mar 21;7:44768. doi: 10.1038/srep44768.

DOI:10.1038/srep44768
PMID:28322299
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5359557/
Abstract

Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires inextricable fabrication processes. Alternatively, it is intriguing to explore methods to control transport properties in the circumstance of no encapsulated layer. This is very challenging because of the ubiquitous presence of adsorbents, which can lead to charged-impurity scattering sites, charge traps, and recombination centers. Here, we show that the short-circuit photocurrent originated from the built-in electric field at the MoS junction is surprisingly insensitive to the gaseous environment over the range from a vacuum of 1 × 10  Torr to ambient condition. The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous environment. The observation of environment-insensitive short-circuit photocurrent demonstrates an alternative method to design device structure for 2D-material-based optoelectronic applications.

摘要

二维(2D)材料由原子级薄的晶体组成,具有巨大的表面积与体积比,其物理性质很容易受到化学环境变化的影响。与其他层状材料(如六方氮化硼)封装是一种常见的做法;然而,这种方法通常需要复杂的制造工艺。另一方面,探索在没有封装层的情况下控制传输特性的方法是很有趣的。由于无处不在的吸附剂,这是非常具有挑战性的,因为它们会导致带电杂质散射位点、电荷陷阱和复合中心。在这里,我们表明,在从 1×10-1 托真空到环境条件的范围内,源自 MoS 结内置电场的短路光电流对气体环境出人意料地不敏感。短路光电流的环境不敏感性归因于与载流子密度梯度相关的扩散电流的特性。相反,具有偏置的光电流表现出典型的持续光导性,并且极大地取决于气体环境。对环境不敏感的短路光电流的观察为基于 2D 材料的光电应用的器件结构设计提供了一种替代方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/35fba56b7129/srep44768-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/66e7609e51ec/srep44768-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/a774a70bef62/srep44768-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/f87cf9cd8d0b/srep44768-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/55fd286e1830/srep44768-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/35fba56b7129/srep44768-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/66e7609e51ec/srep44768-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/a774a70bef62/srep44768-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/f87cf9cd8d0b/srep44768-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/55fd286e1830/srep44768-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b59d/5359557/35fba56b7129/srep44768-f5.jpg

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1
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Nat Nanotechnol. 2016 Jul;11(7):593-7. doi: 10.1038/nnano.2016.42. Epub 2016 Mar 28.
2
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Adv Mater. 2015 Dec 16;27(47):7809-15. doi: 10.1002/adma.201503592. Epub 2015 Oct 28.
3
MoS2 Heterojunctions by Thickness Modulation.通过厚度调制实现的二硫化钼异质结
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Front Cell Dev Biol. 2018 May 8;6:48. doi: 10.3389/fcell.2018.00048. eCollection 2018.
Sci Rep. 2015 Jun 30;5:10990. doi: 10.1038/srep10990.
4
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors.单层MoS₂场效应晶体管中持续光电导的外在起源
Sci Rep. 2015 Jun 26;5:11472. doi: 10.1038/srep11472.
5
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.无定形氧化钛亚氧化物封装的单层二硫化钼中的空气稳定掺杂和本征迁移率增强。
Nano Lett. 2015 Jul 8;15(7):4329-36. doi: 10.1021/acs.nanolett.5b00314. Epub 2015 Jun 26.
6
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.由六方氮化硼封装的具有栅极可控接触、电阻和阈值电压的高稳定双栅 MoS2 晶体管。
ACS Nano. 2015 Jul 28;9(7):7019-26. doi: 10.1021/acsnano.5b01341. Epub 2015 Jun 22.
7
Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy.扫描光电流显微镜研究单层-多层 MoS₂ 结中的能带偏移。
Nano Lett. 2015 Apr 8;15(4):2278-84. doi: 10.1021/nl504311p. Epub 2015 Mar 30.
8
Photothermoelectric and photovoltaic effects both present in MoS2.光热电效应和光伏效应在二硫化钼中均有呈现。
Sci Rep. 2015 Jan 21;5:7938. doi: 10.1038/srep07938.
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Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.二维 MoS2 层界面势垒和电接触的厚度缩放效应。
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