用于单芯片波分复用（WDM）接收器的硅光子平台上二氧化硅阵列波导光栅（AWG）与锗光电二极管的单片集成。

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

作者信息

Nishi Hidetaka, Tsuchizawa Tai, Kou Rai, Shinojima Hiroyuki, Yamada Takashi, Kimura Hideaki, Ishikawa Yasuhiko, Wada Kazumi, Yamada Koji

机构信息

NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan.

出版信息

Opt Express. 2012 Apr 9;20(8):9312-21. doi: 10.1364/OE.20.009312.

DOI:10.1364/OE.20.009312

PMID:22513643

Abstract

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

摘要

在硅（Si）光子平台上，我们采用低温制造技术将基于二氧化硅的阵列波导光栅（AWG）和锗（Ge）光电二极管（PD）进行了单片集成。我们证实了AWG的解复用功能、Ge PD的光电信号转换功能以及所有通道的高速信号检测功能。此外，我们使用倒装芯片键合技术在制造的AWG-PD器件上安装了一个多通道跨阻放大器/限幅放大器（TIA/LA）电路。结果表明，我们的硅光子平台作为光子学-电子学融合平台具有广阔的应用前景。