Department of Chemistry, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan.
Nanotechnology. 2012 Jun 1;23(21):215701. doi: 10.1088/0957-4484/23/21/215701. Epub 2012 May 3.
Nanoparticles of N,N'-bis(n-alkyl)tetracarbonatenaphthalenediimide (NDI) were adsorbed on single-walled carbon nanotube (SWNT) wires dispersed on a SiO(2) substrate. The electrical properties were measured along the long axis of the SWNTs, and in all cases through the nanoparticles showed rectification in semiconducting I-V curve. The plateau width of the I-V curve through the NDI nanoparticles on metallic SWNTs decreased as the particle size increased, while the rectification ratio increased. The conduction mechanism was changed from tunneling conduction to Schottky-like conduction and their boundary is at about 3 nm diameter.
N,N'-双（正烷基）四羧酸萘二酰亚胺（NDI）纳米粒子被吸附在分散在 SiO2 基底上的单壁碳纳米管（SWNT）线上。沿着 SWNTs 的长轴测量了其电学性能，在所有情况下，通过纳米粒子的 I-V 曲线都表现出整流特性。在金属 SWNTs 上的 NDI 纳米粒子的 I-V 曲线的平台宽度随着颗粒尺寸的增加而减小，而整流比增加。传导机制从隧道传导变为肖特基型传导，其边界约为 3nm 直径。
