Institut d'Électronique du Solide et des Systémes, Université de Strasbourg/CNRS, ENSPS, Pôle API, boulevard Sébastien Brant, Parc d'Innovation, BP 10413, F-67412 Illkirch, France.
Nanotechnology. 2012 Jun 1;23(21):215203. doi: 10.1088/0957-4484/23/21/215203.
This paper presents a realistic model that explicitly takes into account the electrostatic coupling between the nanocrystals of a disordered layer constituting the floating gate of a non-volatile memory. A statistical study of the neighborhood of a given nanocrystal is carried out, leading to the mean number of neighboring nanocrystals as a function of the radius of the central nanocrystal. We show that the empty neighborhood of every nanocrystal can be represented by an equivalent torus ring in the previous model of a single nanocrystal. Then the effects of charged nanocrystals are taken into account by an appropriate rigid shift of the energy levels of the central nanocrystal. The proposed model is validated by statistical comparisons with exact 3D computations, and the influence of the electrostatic coupling is analyzed and discussed.
本文提出了一个现实的模型，该模型明确考虑了构成非易失性存储器浮栅的无序层的纳米晶体之间的静电耦合。通过对给定纳米晶体的邻近区域进行统计研究，得到了中心纳米晶体的半径作为函数的邻近纳米晶体的平均数量。我们表明，在以前的单个纳米晶体模型中，每个纳米晶体的空近邻可以用等效的环面来表示。然后，通过对中心纳米晶体的能级进行适当的刚性平移来考虑带电纳米晶体的影响。通过与精确的 3D 计算进行统计比较验证了所提出的模型，并分析和讨论了静电耦合的影响。
