Physics Department of Imam Khomeini International University, Qazvin 34149-16818, Iran.
Molecules. 2012 May 2;17(5):5021-9. doi: 10.3390/molecules17055021.
In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.
在这项研究中，通过金属锌薄膜的热氧化合成了高质量的氧化锌（ZnO）纳米线。通过 PVD 技术在玻璃基板上沉积了厚度为 250nm 的金属锌薄膜。将沉积的锌薄膜在空气在 450°C 到 650°C 之间的各种温度下进行氧化。通过扫描电子显微镜（SEM）、X 射线衍射（XRD）、能谱（EDX）和光致发光（PL）测量来检查 ZnO 纳米线的表面形貌、结构和光学性能。XRD 分析表明，氧化锌纳米线具有纤锌矿结构，取向为（002），在 600°C 下制备的纳米线比在其他温度下制备的样品具有更好的结晶质量。SEM 结果表明，随着氧化温度的升高，氧化锌纳米线的尺寸增加。确定合成高密度 ZnO 纳米线的最佳温度为 600°C。EDX 结果表明，样品中仅存在 Zn 和 O，表明其为纯 ZnO 组成。合成的纳米线的 PL 光谱表现出强烈的紫外发射和相对较弱的绿光发射。
