Vega Omar, Delgado David, Wong Freddy, Gonzalez Rosette, Rosa Luis G
Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, Puerto Rico.
Scanning. 2012 Nov-Dec;34(6):404-9. doi: 10.1002/sca.21024. Epub 2012 May 2.
Thin films of an organic ferroelectric system, poly(vinylidene fluoride with trifluoroethylene) P(VDF-TrFE, Kureha Corporation, Tokyo, Japan) 75:25 layers, have been deposited on highly ordered pyrolytic graphite and silicon dioxide by the horizontal Schaefer method of Langmuir-Blodgett techniques. It is possible to "shave" or mechanically displace small regions of the polymer film by using atomic force microscope nanolithography techniques such as nanoshaving, leaving swaths of the surface cut to a depth of 4 nm and 12 nm exposing the substrate. The results of fabricating stripes by nanoshaving two holes close to each other show a limit to the material "stripe" widths of an average of 153.29 nm and 177.67 nm that can be produced. Due to the lack of adhesion between the substrates and the polymer P(VDF-TrFE) film, smaller "stripes" of P(VDF-TrFE) cannot be produced, and it can be shown by the sequencing of nanoshaved regions that "stripes" of thin films can be removed.
通过朗缪尔-布洛杰特技术的水平施瓦弗方法，在高度有序的热解石墨和二氧化硅上沉积了有机铁电体系的薄膜，即聚（偏二氟乙烯与三氟乙烯）P(VDF-TrFE，日本东京吴羽化学工业株式会社) 75:25层。利用原子力显微镜纳米光刻技术（如纳米刮削），可以“刮削”或机械移动聚合物薄膜的小区域，使表面切割出深度为4纳米和12纳米的条带，从而露出基底。通过纳米刮削彼此靠近的两个孔来制造条纹的结果表明，能够产生的材料“条纹”宽度存在限制，平均宽度为153.29纳米和177.67纳米。由于基底与聚合物P(VDF-TrFE)薄膜之间缺乏附着力，无法制造出更小的P(VDF-TrFE)“条纹”，并且通过纳米刮削区域的排序可以表明薄膜的“条纹”可以被去除。
