ECN Solar Energy 1755 ZG Petten, The Netherlands.
Adv Mater. 2010 Mar 5;22(9):933-45. doi: 10.1002/adma.200900759.
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
记忆功能是许多电子设备应用的前提条件。基于铁电性的有机非易失性存储器件是开发低成本存储技术的一种很有前途的方法。在这篇综述文章中，我们讨论了这一领域的最新进展，重点介绍了三个最重要的器件概念：铁电场效应晶体管、铁电电容器和铁电二极管。还讨论了这些器件在更大的存储阵列中的集成。
