National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.
J Phys Condens Matter. 2012 Jun 6;24(22):225301. doi: 10.1088/0953-8984/24/22/225301. Epub 2012 May 2.
The quantum Hall and longitudinal resistances in four-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurement, the transverse contacts are assumed to be located at the p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in a four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with many new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.
在垂直磁场下，研究了四端铁磁石墨烯 p-n 结中的量子霍尔和纵向电阻。在霍尔测量中，假设横向接触位于 p-n 界面处，以避免界面处边缘态的混合，从而得到拓扑保护的量子电阻。根据载流子类型，四端 p-n 结中的电阻可以自然地分为九个不同的区域。观察到对称的霍尔和纵向电阻，由于自旋劈裂和局部势之间的竞争，出现了许多新的稳健量子平台。
