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计算多串联量子霍尔效应器件中纵向电阻的影响。

Calculating the Effects of Longitudinal Resistance in Multi-Series-Connected Quantum Hall Effect Devices.

作者信息

Cage M E, Jeffery A, Elmquist R E, Lee K C

机构信息

National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.

出版信息

J Res Natl Inst Stand Technol. 1998 Nov-Dec;103(6):561-592. doi: 10.6028/jres.103.037. Epub 1998 Dec 1.

Abstract

Many ac quantized Hall resistance experiments have measured significant values of ac longitudinal resistances under temperature and magnetic field conditions in which the dc longitudinal resistance values were negligible. We investigate the effect of non-vanishing ac longitudinal resistances on measurements of the quantized Hall resistances by analyzing equivalent circuits of quantized Hall effect resistors. These circuits are based on ones reported previously for dc quantized Hall resistors, but use additional resistors to represent longitudinal resistances. For simplification, no capacitances or inductances are included in the circuits. The analysis is performed for many combinations of multi-series connections to quantum Hall effect devices. The exact algebraic solutions for the quantized Hall resistances under these conditions of finite ac longitudinal resistances provide corrections to the measured quantized Hall resistances, but these corrections do not account for the frequency dependences of the ac quantized Hall resistances reported in the literature.

摘要

许多交流量子化霍尔电阻实验在温度和磁场条件下测量到了显著的交流纵向电阻值,而在这些条件下直流纵向电阻值可忽略不计。我们通过分析量子化霍尔效应电阻器的等效电路,研究了非零交流纵向电阻对量子化霍尔电阻测量的影响。这些电路基于先前报道的用于直流量子化霍尔电阻器的电路,但使用额外的电阻来表示纵向电阻。为简化起见,电路中不包括电容或电感。针对多串联连接到量子霍尔效应器件的多种组合进行了分析。在有限交流纵向电阻的这些条件下,量子化霍尔电阻的精确代数解为测量到的量子化霍尔电阻提供了修正,但这些修正并未考虑文献中报道的交流量子化霍尔电阻的频率依赖性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a8cc/4890950/54807d6f6b0d/j36cag1fA-1.jpg

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