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二辛基三噻吩薄膜的界面诱导晶体结构。

Interface induced crystal structures of dioctyl-terthiophene thin films.

机构信息

Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, 810 Graz, Austria.

出版信息

Langmuir. 2012 Jun 5;28(22):8530-6. doi: 10.1021/la301213d. Epub 2012 May 23.

Abstract

Temperature dependent structural and morphological investigations on semiconducting dioctyl-terthiophene (DOTT) thin films prepared on silica surfaces reveals the coexistence of surface induce order and distinct crystalline/liquid crystalline bulk polymorphs. X-ray diffraction and scanning force microscopy measurements indicate that at room temperature two polymorphs are present: the surface induced phase grows directly on the silica interface and the bulk phase on top. At elevated temperatures the long-range order gradually decreases, and the crystal G (340 K), smectic F (348 K), and smectic C (360 K) phases are observed. Indexation of diffraction peaks reveals that an up-right standing conformation of DOTT molecules is present within all phases. A temperature stable interfacial layer close to the silica-DOTT interface acts as template for the formation of the different phases. Rapid cooling of the DOTT sample from the smectic C phase to room temperature results in freezing into a metastable crystalline state with an intermediated unit cell between the room temperature crystalline phase and the smectic C phase. The understanding of such interfacial induced phases in thin semiconducting liquid crystal films allows tuning of crystallographic and therefore physical properties within organic thin films.

摘要

在二氧化硅表面制备的半导体二辛基噻吩(DOTT)薄膜的温度依赖结构和形态研究表明,表面诱导有序和明显的晶态/液晶态体多晶型共存。X 射线衍射和扫描力显微镜测量表明,在室温下存在两种多晶型:表面诱导相直接在二氧化硅界面上生长,而体相在其顶部生长。在升高的温度下,长程有序逐渐减少,并观察到晶体 G(340 K)、向列 F(348 K)和向列 C(360 K)相。衍射峰的指标化表明,DOTT 分子的直立构象存在于所有相中。靠近二氧化硅-DOTT 界面的温度稳定界面层充当形成不同相的模板。将 DOTT 样品从向列 C 相快速冷却到室温会导致在中间单元胞介于室温晶体相和向列 C 相之间冻结到亚稳态结晶态。对这种在薄的半导体液晶薄膜中的界面诱导相的理解可以在有机薄膜中调整晶体学和因此的物理性质。

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